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| HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 VCE(sat) tfi(typ) = 120 TO-247 AD (IXGH) = 600 = 75 = 2.3 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TC = 25C Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C G C E C (TAB) TO-268 (D3) ( IXGT) G E TO-268 Leaded (IXGJ) G C E C (TAB) (TAB) TO-264 AA (IXGK) Mounting torque TO-247AD TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 300 C g g g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-264 TO-268 E C (TAB) D = Drain TAB = Collector 6 10 4 G = Gate E = Emitter Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 600 2.5 TJ = 25C TJ = 125C 5.0 200 1 100 2.3 V V A mA nA V Features * International standard packages * High frequency IGBT * Latest generation HDMOSTM process * High current handling capability * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Easy to mount with 1 screw (insulated mounting screw hole) * Switching speed for high frequency applications * High power density 95585F(12/02) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2002 IXYS All rights reserved IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. m a x . 25 42 4100 VCE = 25 V, VGE = 0 V, f = 1 MHz 310 95 160 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 55 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 * VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 * VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 50 50 150 120 3.0 50 50 3 200 250 4.2 0.42 TO-247 & TO-268 leaded packages TO-264 package 0.25 0.15 250 250 4.5 S 1 2 3 TO-247 AD (IXGH) Outline gfs Cies Coes Cres QG QGE QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Terminals: 1 - Gate 2 -Collector 3 -Emitter Tab-Collector Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC TO-264 AA (IXGK) Outline TO-268 (IXGT) Outline TO-268 (IXGJ) Leaded Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. Terminals: 1 - Gate 2Collector .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 1. Saturation Voltage Characteristics 100 TJ = 25C VGE = 15V 13V 11V 9V Figure 2. Extended Output Characteristics 200 160 TJ = 25C 80 VGE = 15V 13V 11V 9V IC - Amperes 60 40 20 5V IC - Amperes 7V 120 80 40 5V 7V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VCE - Volts VCE - Volts Figure 3. Saturation Voltage Characteristics 100 80 TJ = 125C V = 15V GE 13V 11V 9V Figure 4. Temperature Dependence of VCE(sat) 1.6 VGE = 15V VCE (sat) - Normalized 1.4 1.2 1.0 IC = 25A IC = 50A IC = 100A IC - Amperes 60 40 7V 0.8 0.6 0.4 25 5V 20 0 0 1 2 3 4 5 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 5. Admittance Curves 100 VCE = 10V Figure 6. Capacitance Curves 10000 f = 1Mhz Ciss 80 Capacitance - pF IC - Amperes 60 40 TJ = 125C TJ = 25C 1000 100 Coss Crss 20 0 10 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts (c) 2002 IXYS All rights reserved IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 7. Dependence of EON and EOFF on IC 6 TJ = 125C Figure 8. Dependence of EON and EOFF on RG 12 6 5 TJ = 125C E(ON) IC = 100A E(OFF) 12 10 5 E(ON) - millijoules RG = 4.7 E(ON) 10 E(OFF) - milliJoules E(OFF) - millijoules 4 E(OFF) 8 6 4 2 0 100 E(ON) - millijoules 4 3 2 1 E(ON) IC =25A E(ON) E(OFF) E(OFF) 8 6 IC = 50A 3 2 1 0 0 20 40 60 80 4 2 0 0 0 10 20 30 40 50 60 IC - Amperes RG - Ohms Figure 9. Gate Charge 16 IC = 25A VCE = 250V Figure 10. Turn-off Safe Operating Area 600 100 12 IC - Amperes VGE - Volts 8 10 TJ = 125C RG = 6.2 dV/dt < 5V/ns 4 1 0 0 40 80 120 160 200 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Figure 11. IGBT Transient Thermal Resistance 1 ZthJC (K/W) 0.1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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